Reflection gain up to 6 dB at 65 GHz in GaInAs/AlInAs superlattice oscillators

被引：2
作者：
Palmier, JF
Minot, C
LePerson, H
Harmand, JC
Bouadma, N
Esnault, JC
Arquey, D
Heliot, F
Medus, JP
机构：
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 16期
关键词：
semiconductor superlattices; optical control of microwaves;
D O I：
10.1049/el:19960962
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaInAs/AlInAs superlattice oscillators with optical access have been fabricated and tested in the V band. The devices exhibit the NDC mechanism at frequencies higher than 65GHz, with low parasitic damping and a gain value of 6dB at 65GHz. The measured S parameters are in fair agreement with a simple numerical simulation.
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收藏
页码：1506 / 1507
页数：2
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