Chemical etch studies of PtSi/p-Si(100) metal- semiconductor composite films

被引：4
作者：
Rahman, A
Bates, CW
机构：
[1] Howard Univ, Dept Phys, Washington, DC 20059 USA
[2] Howard Univ, Dept Elect Engn, Mat Sci Res Ctr Excellence, Washington, DC 20059 USA
来源：
MATERIALS LETTERS | 2002年 / 54卷 / 2-3期
关键词：
chemical etch studies; PtSi/p-Si(100) composite films; transport properties;
D O I：
10.1016/S0167-577X(01)00544-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Six-micron thick PtSi/p-Si(100) composite films, prepared by magnetron sputtering of a PtSi target were treated with chemical etchants to remove its segregated surface layer. This process was required in order to measure the electronic transport properties of the unsegregated portion of the film. Four point probe measurements in conjunction with chemical etch treatments were used to characterized the progress of the etch treatments. Upon obtaining the final resistivity of the film, Hall measurements were carried out to determine the overall transport properties. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：98 / 101
页数：4
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