Structural dependence of the thermal resistance of trench-isolated bipolar transistors

被引：38

作者：

Rieh, JS ^{[1
]}

Johnson, J ^{[1
]}

Furkay, S ^{[1
]}

Greenberg, D ^{[1
]}

Freeman, G ^{[1
]}

Subbanna, S ^{[1
]}

机构：

[1] IBM Corp, Microelect, Hopewell Jct, NY 12533 USA

来源：

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年

关键词：

D O I：

10.1109/BIPOL.2002.1042896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and. provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.

引用

页码：100 / 103

页数：4

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