AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers

被引：8

作者：

Chiu, Hsien-Chin ^{[1
]}

Chen, Shang-Cyun ^{[1
]}

Chiu, Jiun-Wei ^{[1
]}

Li, Bo-Hong ^{[1
]}

Wang, Hou-Yu ^{[1
]}

Peng, Li-Yi ^{[1
]}

Wang, Hsiang-Chun ^{[1
]}

Hsueh, Kuang-Po ^{[2
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Taoyuan, Taiwan

[2] Vanung Univ, Dept Digital Multimedia Technol, Chungli, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 83卷

关键词：

AIN; GaN; AIGaN; Schottky barrier diode; Fe-doped; Buffer layer; LOW-FREQUENCY NOISE; BREAKDOWN VOLTAGE; 1/F NOISE; DOPED GAN; HEMTS; PERFORMANCE; SAPPHIRE; GROWTH;

D O I：

10.1016/j.microrel.2017.05.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study demonstrated AlGaN/GaN Schottky barrier diodes (SBDs) for use in high-frequency, high-power, and high-temperature electronics applications. Four structures with various Fe doping concentrations in the buffer layers were investigated to suppress the leakage current and improve the breakdown voltage. The fabricated SBD with an Fe-doped AlGaN buffer layer of 8 x 10(17) cm(-3) realized the highest on-resistance (R-ON) and turn-on voltage (V-ON) because of the memory effect of Fe diffusion. The optimal device was the SBD with an Fe-doped buffer layer of 7 x 10(17) cm(-3), which exhibited a R-ON of 31.6 m Omega-cm(2), a V-ON of 12 V, a breakdown voltage of 803 V, and a buffer breakdown voltage of 758 V. Additionally, the low-frequency noise decreased when the Fe doping concentration in the buffer layer was increased. This was because the electron density in the channel exhibited the same trend as that of the Fe doping concentration in the buffer layer. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：238 / 241

页数：4

共 22 条

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