Effect of Band-Alignment Operation on Carrier Transport in Bi2Se3 Topological Insulator

被引：5

作者：

Gupta, Gaurav ^{[1
]}

Jalil, Mansoor Bin Abdul ^{[1
]}

Liang, Gengchiau ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

基金：

新加坡国家研究基金会;

关键词：

SINGLE DIRAC CONE; GRAPHENE;

D O I：

10.1038/srep06220

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Band-alignment induced current modulation in Bi2Se3 three-dimensional topological insulator slab has been investigated by quantum transport simulations for three different device designs, one for purely lateral transport and other two with vertical transport. Non-Equilibrium Green Function formalism has been deployed to understand the transport mechanism in band-alignment devices to appraise the possibility of a 3D-TI based resonant device. A resonance condition is observed when the Dirac-points (bands) are aligned. This results in the maximum current at resonance for the design with only lateral transport. However, current ratio between resonant and non-resonant condition is found to be relatively small and strong temperature dependence is also noticed. The other two designs with vertical transport have degraded transfer characteristics, although from state-of-art literature they are expected to manifest nearly an ideal resonance peak. The physical insights for these observations have been posited along with the suggestions for attaining close to an ideal operation for the first design, which we also suggest for the pursuit in the future for spintronic oscillators and analog multipliers based on band-alignment induced resonance.

引用

页数：7

共 35 条

[1]

Akhmerov A. R., 2009, PHYS REV LETT, V102

[2] STM Imaging of Impurity Resonances on Bi2Se3 [J].

Alpichshev, Zhanybek ;

Biswas, Rudro R. ;

Balatsky, Alexander V. ;

Analytis, J. G. ;

Chu, J. -H. ;

Fisher, I. R. ;

Kapitulnik, A. .

PHYSICAL REVIEW LETTERS, 2012, 108 (20)

[3] Modeling of nanoscale devices [J].

Anantram, M. P. ;

Lundstrom, Mark S. ;

Nikonov, Dmitri E. .

PROCEEDINGS OF THE IEEE, 2008, 96 (09) :1511-1550

[4]

Atulasimha J, 2012, 2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)

[5] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[6] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[7] Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2011, 106 (19)

[8] The focusing of electron flow and a Veselago lens in graphene p-n junctions [J].

Cheianov, Vadim V. ;

Fal'ko, Vladimir ;

Altshuler, B. L. .

SCIENCE, 2007, 315 (5816) :1252-1255

[9] Surface edge state and half-quantized Hall conductance in topological insulators [J].

Chu, Rui-Lin ;

Shi, Junren ;

Shen, Shun-Qing .

PHYSICAL REVIEW B, 2011, 84 (08)

[10]

Datta S., 2017, Lessons from Nanoelectronics: A New Perspective on TransportBasic Concepts, V2nd

← 1 2 3 4 →