Extended Frenkel pairs and band alignment at metal-oxide interfaces

被引：26

作者：

Sharia, O. ^{[1
]}

Tse, K. ^{[2
]}

Robertson, J. ^{[2
]}

Demkov, Alexander A. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 12期

基金：

美国国家科学基金会;

关键词：

catalysts; charge exchange; CMOS integrated circuits; dielectric materials; energy states; extended defects; Fermi level; Frenkel defects; hafnium compounds; interface structure; nickel; rhodium; work function; TOTAL-ENERGY CALCULATIONS; 1ST-PRINCIPLES; OFFSETS; GATES;

D O I：

10.1103/PhysRevB.79.125305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show how oxygen vacancies in metal oxides next to high-work-function metals are stabilized by an oxygen exchange reaction with the metal, and by a charge transfer from the vacancy energy level to the metal Fermi level. The results help explain some of the Fermi-level pinning problems in high-k dielectric gate stacks in complimentary metal oxide semiconductor technology and also explain the driving force behind the strong metal-support interaction in oxide-supported catalysts.

引用

页数：8

共 50 条

[1] Band alignment at metal-semiconductor and metal-oxide interfaces
Robertson, John
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (02): : 261 - 269
[2] METAL-OXIDE INTERFACES
ERNST, F
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1995, 14 (03): : 97 - 156
[3] Band alignment at metal/organic and metal/oxide/organic interfaces
Helander, M. G.
Wang, Z. B.
Qiu, J.
Lu, Z. H.
APPLIED PHYSICS LETTERS, 2008, 93 (19)
[4] Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy
Lenser, C.
Koehl, A.
Patt, M.
Schneider, C. M.
Waser, R.
Dittmann, R.
PHYSICAL REVIEW B, 2014, 90 (11)
[5] STRUCTURE OF METAL-OXIDE INTERFACES
PIERAGGI, B
DABOSI, F
JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1980, 5 (04): : 489 - &
[6] STRUCTURE OF METAL-OXIDE INTERFACES
LESEUR, M
PIERAGGI, B
JOURNAL DE PHYSIQUE, 1985, 46 (NC-4): : 135 - 140
[7] Metal-oxide interfaces at the nanoscale
Zhou, Guangwen
APPLIED PHYSICS LETTERS, 2009, 94 (23)
[8] METAL TRANSPORT IN VOIDS AT METAL-OXIDE INTERFACES
HOWES, VR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1286 - &
[9] Creep and failure at metal-oxide interfaces
Dillon, Shen J.
Schoell, Ryan M.
Wright, Andrew
Luo, Jian
Rabkin, Eugen
Hattar, Khalid
ACTA MATERIALIA, 2025, 283
[10] HYDROGEN AND OXYGEN AT METAL-OXIDE INTERFACES
HUANG, XY
MADER, W
KIRCHHEIM, R
ACTA METALLURGICA ET MATERIALIA, 1991, 39 (05): : 893 - 907

← 1 2 3 4 5 →