Electromigration drift and threshold in Cu thin-film interconnects

被引：40

作者：

Frankovic, R

Bernstein, GH

机构：

[1] Department of Electrical Engineering, University of Notre Dame, Notre Dame

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.544396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electromigration-induced ionic drift velocity and critical length-current density product, (jl(c)) of Cu thin film conductors, were measured using the Blech-Kinsbron edge-displacement technique, Unencapsulated Cu edge-displacement segments on TiN conductors were stressed in vacuum at a modest current density of 6 x 10(5) A/cm(2) in the temperature range of 175-275 degrees C. Drift velocity was observed to be between 1-1/2 to 3 orders-of-magnitude lower than that previously measured for unencapsulated Al in this temperature range, We measured an activation energy for EM-induced drift of 1.25 +/- 0.08 eV which corresponds to grain boundary diffusion in Cu, Critical lengths were measured and the jl(c) threshold was estimated to range between 900-1600 A/cm, We calculated a Cu grain boundary Z* value of -0.7, to our knowledge, this study is the first to measure Z* for electromigration in Cu thin film conductors.

引用

页码：2233 / 2239

页数：7

共 38 条

[31] REACTIVE ION ETCHING OF COPPER-FILMS [J].