Leading role of grain boundaries in colossal permittivity of doped and undoped CCTO

被引:91
作者
De Almeida-Didry, Sonia [1 ]
Autret, Cecile [1 ]
Lucas, Anthony [2 ]
Honstettre, Christophe [1 ]
Pacreau, Francois [2 ]
Gervais, Francois [1 ]
机构
[1] Univ Tours, CNRS, UFR Sci & Techn, GREMAN UMR 7341, F-37200 Tours, France
[2] SRT Microceram, F-41100 Vendome, France
关键词
Colossal permittivity; Capacitor; Leakage; IBLC; CCTO; HIGH-DIELECTRIC-CONSTANT; CACU3TI4O12; CERAMICS; BEHAVIOR;
D O I
10.1016/j.jeurceramsoc.2014.06.009
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The role of grain boundaries in the colossal permittivity epsilon of doped and undoped calcium copper titanate, CaCu3Ti4O12 (CCTO), is illustrated by a first correlation - over four orders of magnitude - between epsilon and the capacity of grain boundaries, not that of grains, deduced from the analysis of impedance measurements. The DC resistance of the CCTO sample which is essential to make efficient capacitors for technological applications, as well as the loss factor tan(delta), are found to be correlated with the resistance of the grain boundaries rather than that of the grains. The correlation extends over almost seven orders of magnitude. These findings, consistent with the internal barrier layer capacitance (IBLC) model, indicate the leading role of grain boundaries in the origin of the capacitance of CCTO samples (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3649 / 3654
页数:6
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