Why do dislocations assemble into interfaces in epitaxy as well as in crystal plasticity? To minimize free energy

被引:16
作者
Kuhlmann-Wilsdorf, D [1 ]
机构
[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
来源
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 2002年 / 33卷 / 08期
关键词
D O I
10.1007/s11661-002-0373-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dislocations commonly form planar arrays that minimize the free interfacial energy between relatively mismatched crystal volumes. In epitaxy and phase transformations, the causative misfit is that between differences in lattice structure and/or orientations of different phases. In deformed homogeneous crystalline materials, the planar dislocation arrays are grain and mosaic block boundaries that accommodate relative misorientations within the same crystal structure. Thus, overwhelmingly, planar dislocation arrays have a basically common origin, namely minimization of interfacial energies. Consequently, they are all subject to the low-energy dislocation structures (LEDS) hypothesis. While the specific applications of the underlying general theory are well advanced in terms of epitaxy, phase, and grain boundaries, in connection with plastic deformation that very basis is widely overlooked, if not denied. The present article aims to (a) document the fact that, while being formed, dislocation structures due to plastic deformation are in thermodynamical equilibrium, (b) firmly establish the outlined connection between planar dislocation arrays of all types, and, thereby, (c) establish the kinship between epitaxy and plastic deformation of crystalline materials.
引用
收藏
页码:2519 / 2539
页数:21
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