Towards industrial advanced front-junction n-type silicon solar cells

被引：0
|
作者：
Wan, Yimao [1 ]
Samundsett, Chris [1 ]
Kho, Teng [1 ]
McKeon, Josephine [1 ]
Black, Lachlan [1 ]
Macdonald, Daniel [1 ]
Cuevas, Andres [1 ]
Sheng, Jian [2 ]
Sheng, Yun [2 ]
Yuan, Shengzhao [2 ]
Zhang, Chun [2 ]
Feng, Zhiqiang [2 ]
Verlinden, Pierre J. [2 ]
机构：
[1] Australian Natl Univ, Res Sch Engn, Canberra, ACT 0200, Australia
[2] Trina Solar Ltd, State Key Lab PV Sci & Technol, Changzhou 213031, Jiangsu, Peoples R China
来源：
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年
关键词：
silicon; surface passivation; boron; phosphorus; photovoltaic cells; SURFACE RECOMBINATION; P-TYPE; THERMAL-STABILITY;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Recent progress in the development of advanced front-junction n-type monocrystalline solar cells for potential industrial fabrication is presented. The textured, boron-diffused front surface is passivated with a stack of Atmospheric Pressure Chemical Vapor Deposited (APCVD) Al2O3 and Plasma-Enhanced Chemical Vapor Deposited (PECVD) SiNx. A champion cell with an in-house measured efficiency of 21.6% is obtained for small-area cells (i.e., 2x2 cm(2)) fabricated at the ANU. The high open-circuit voltage of 664 mV demonstrates the excellent passivation of both the front and rear surfaces. The cell design and process have demonstrated a good tolerance to substrate resistivity variations, with an average cell efficiencies close to 21% for resistivity varying between 3 and 10 Omega.cm. Moreover, with an adaption of the process developed at the ANU, large-area cells (i.e., 12.5x12.5 cm(2)) are fabricated at Trina Solar on n-type Cz substrates with a resistivity of 2.5 Omega.cm. A champion cell with an in-house measured efficiency of 20.5% is obtained, demonstrating a high potential in commercializing the advanced cells developed in this work. Finally, simulations reveal that further improvements in cell efficiency are to be mainly achieved through further optimisations of the rear side contact geometry and rear surface passivation.
引用
收藏
页码：862 / 865
页数：4
相关论文
共 50 条
  • [41] Fabrication and temperature-dependent performance of aluminum-alloyed back-junction n-type silicon solar cells
    Li, Shuai
    Lin, Guanhua
    Li, Yang
    Li, Zhen
    Gao, Wenxiu
    Cheng, Qijin
    Chen, Chao
    PROGRESS IN PHOTOVOLTAICS, 2018, 26 (04): : 303 - 309
  • [42] Towards Specifications of n-type Silicon Purified via the Metallurgical Route
    Schutz-Kuchly, Thomas
    Sanzone, Vincent
    Palais, Olivier
    Kraiem, Jed
    Veschetti, Yannick
    PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 : 35 - 40
  • [43] Impact of bulk impurity contamination on the performance of high-efficiency n-type silicon solar cells
    Richter, Armin
    Benick, Jan
    Fell, Andreas
    Hermle, Martin
    Glunz, Stefan W.
    PROGRESS IN PHOTOVOLTAICS, 2018, 26 (05): : 342 - 350
  • [44] N-type Silicon Solar Cells Featuring an Electron-Selective TiO2 Contact
    Yang, Xinbo
    Weber, Klaus
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [45] Co-Diffusion Processing of p+/n/n+ Structure for n-Type Silicon Solar Cells Using Boron Doped Paper Sheets
    El Amrani, A.
    Boucheham, A.
    Guendouzi, A.
    Labdelli, B.
    Nasraoui, C.
    Si-Kaddour, R.
    SILICON, 2022, 14 (01) : 223 - 228
  • [46] Application of n-type microcrystalline silicon oxide as back reflector of crystalline silicon heterojunction solar cells
    Nakada, Kazuyoshi
    Miyajima, Shinsuke
    Konagai, Makoto
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (08)
  • [47] Heterojunction solar cells with 23% efficiency on n-type epitaxial kerfless silicon wafers
    Kobayashi, Eiji
    Watabe, Yoshimi
    Hao, Ruiying
    Ravi, T. S.
    PROGRESS IN PHOTOVOLTAICS, 2016, 24 (10): : 1295 - 1303
  • [48] Influence of copper diffusion on lifetime degradation in n-type Czochralski silicon for solar cells
    Gaspar, Guilherme
    Modanese, Chiara
    Schon, Hendrik
    Di Sabatino, Marisa
    Arnberg, Lars
    Ovrelid, Eivind J.
    5TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2015, 2015, 77 : 586 - 591
  • [49] Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells
    Kruegener, Jan
    Osten, H. Joerg
    Kiefer, Fabian
    Haase, Felix
    Peibst, Robby
    2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT), 2016,
  • [50] Identification of the most relevant metal impurities in mc n-type silicon for solar cells
    Schoen, J.
    Schindler, F.
    Kwapil, W.
    Knoerlein, M.
    Krenckel, P.
    Riepe, S.
    Warta, W.
    Schubert, M. C.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 142 : 107 - 115
12345