We apply quantum optimal control theory (QOCT) to an exactly solvable non-Markovian open quantum bit (qubit) system to achieve state-independent quantum control and construct high-fidelity quantum gates for moderate qubit decaying parameters. An important quantity, improvement I, is proposed and defined to quantify the correction of gate errors due to the QOCT iteration when the environment effects are taken into account. With the help of the exact dynamics, we explore how the gate error is corrected in the open qubit system and determine the conditions for significant improvement. The model adopted in this paper can be implemented experimentally in realistic systems such as the circuit QED system.
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Washington Univ, Dept Phys, St Louis, MO 63130 USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Gaikwad, Chandrashekhar
Kowsari, Daria
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Washington Univ, Dept Phys, St Louis, MO 63130 USA
Univ Southern Calif, Ctr Quantum Informat Sci & Technol, Los Angeles, CA 90089 USA
Univ Southern Calif, Dept Phys & Astron, Los Angeles, CA 90089 USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Kowsari, Daria
Brame, Carson
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Washington Univ, Dept Phys, St Louis, MO 63130 USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Brame, Carson
Song, Xingrui
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Washington Univ, Dept Phys, St Louis, MO 63130 USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Song, Xingrui
Zhang, Haimeng
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Univ Southern Calif, Ctr Quantum Informat Sci & Technol, Los Angeles, CA 90089 USA
Univ Southern Calif, Ming Hsieh Dept Elect & Comp Engn, Los Angeles, CA 90089 USAWashington Univ, Dept Phys, St Louis, MO 63130 USA
Zhang, Haimeng
Esposito, Martina
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CNR SPIN Complesso Monte S Angelo, Via Cintia, I-80126 Naples, ItalyWashington Univ, Dept Phys, St Louis, MO 63130 USA
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Univ Sao Paulo, FCFRP, Dept Quim & Fis, BR-14040903 Ribeirao Preto, BrazilUniv Sao Paulo, FCFRP, Dept Quim & Fis, BR-14040903 Ribeirao Preto, Brazil
da Silva, M. A. A.
Viswanathan, G. M.
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Univ Fed Rio Grande do Norte, Dept Fis Teor & Expt, BR-59078900 Natal, RN, BrazilUniv Sao Paulo, FCFRP, Dept Quim & Fis, BR-14040903 Ribeirao Preto, Brazil
Viswanathan, G. M.
Cressoni, J. C.
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Univ Sao Paulo, FCFRP, Dept Quim & Fis, BR-14040903 Ribeirao Preto, BrazilUniv Sao Paulo, FCFRP, Dept Quim & Fis, BR-14040903 Ribeirao Preto, Brazil
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Al Imam Mohammad Ibn Saud Islamic Univ IMSIU, Coll Sci, Dept Phys, Riyadh, Saudi Arabia
Abdus Salam Int Ctr Theoret Phys, Trieste, ItalyAl Imam Mohammad Ibn Saud Islamic Univ IMSIU, Coll Sci, Dept Phys, Riyadh, Saudi Arabia
Berrada, K.
Eleuch, H.
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Texas A&M Univ, Inst Quantum Sci & Engn, College Stn, TX 77843 USA
Abu Dhabi Univ, Coll Arts & Sci, Dept Appl Sci & Math, Abu Dhabi, U Arab EmiratesAl Imam Mohammad Ibn Saud Islamic Univ IMSIU, Coll Sci, Dept Phys, Riyadh, Saudi Arabia
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Ctr Atom Bariloche, Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
Univ N Texas, Ctr Nonlinear Sci, Denton, TX 76203 USACtr Atom Bariloche, Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
Budini, Adrian A.
Grigolini, Paolo
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Univ N Texas, Ctr Nonlinear Sci, Denton, TX 76203 USA
CNR, Ist Proc Chim Fis, Area Ric Pisa, I-56124 Pisa, Italy
Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, ItalyCtr Atom Bariloche, Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina