Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen

被引：13
作者：
Borghesi, A
Sassella, A
Geranzani, P
Porrini, M
Pivac, B
机构：
[1] Univ Milano Bicocca, INFM, I-20125 Milan, Italy
[2] MEM Elect Mat, I-39012 Merano, BZ, Italy
[3] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 73卷 / 1-3期
关键词：
silicon; interstitial oxygen; oxygen precipitation; infrared spectroscopy;
D O I：
10.1016/S0921-5107(99)00459-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The study of the optical behavior of oxygen in silicon is presented, based on infrared absorption measurements performed at liquid helium temperature. A total of six groups of silicon wafers characterized by different initial concentrations of interstitial oxygen from similar to 2 x 10(17) to similar to 10(18) atoms cm(-3) were analysed. The experimental conditions were chosen so as to distinguish the contributions from interstitial and precipitated oxygen, while the thermal treatment of the samples was studied in order to cause the growth of the grown-in precipitates. The relative concentrations of platelet and spheroid precipitates grown after the thermal treatment of the wafers are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：145 / 148
页数：4
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