High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector

被引：140

作者：

Raghavan, S ^{[1
]}

Rotella, P

Stintz, A

Fuchs, B

Krishna, S

Morath, C

Cardimona, DA

Kennerly, SW

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] USAF, Res Lab, AFRL VSSS, Kirtland AFB, NM 87117 USA

[3] USA, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.1498009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Normal incidence InAs/In0.15Ga0.85As dots-in-a-well detectors operating at T=78 K with lambda(p)similar to7.2 mum and a spectral width (Deltalambda/lambda) of 35% are reported. The peak at 7.2 mum is attributed to the bound-to-bound transitions between the ground state of the dot and the states within the InGaAs well. A broad shoulder around 5 mum, which is attributed to the bound-to-continuum transition, is also observed. Calibrated blackbody measurements at a device temperature of 78 K yield a peak responsivity of 3.58 A/W (V-b=-1 V), peak detectivity=2.7x10(9) cm Hz(1/2)/W (V-b=-0.3 V), conversion efficiency of 57% and a gain similar to25. (C) 2002 American Institute of Physics.

引用

页码：1369 / 1371

页数：3

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