Island formation during deposition or etching

被引：19

作者：

Bartelt, MC ^{[1
]}

Hannon, JB

Schmid, AK

Stoldt, CR

Evans, JW

机构：

[1] Sandia Natl Labs, Livermore, CA 94550 USA

[2] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[3] Iowa State Univ, Dept Chem, Ames, IA 50011 USA

[4] Iowa State Univ, Ames Lab, Ames, IA 50011 USA

[5] Iowa State Univ, Dept Math, Ames, IA 50011 USA

来源：

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS | 2000年 / 165卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

models of non-equilibrium phenomena; low-energy electron microscopy; scanning tunneling microscopy; epitaxy; etching; growth; nucleation; cobalt; copper; ruthenium; silicon; oxygen; low-index single crystal surfaces;

D O I：

10.1016/S0927-7757(99)00419-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The behavior of a non equilibrium lattice-gas model for irreversible formation of two-dimensional islands during submonolayer deposition or etching is examined in detail. In particular, recent developments in describing capture of diffusing species by islands of various sizes are reviewed. Both exact and geometric descriptions of capture are discussed, elucidating the role of the local environment of the islands, and its dependence on island size, on adatom capture and individual island growth rates. Limitations in mean-field treatments of capture are noted. These results are applied to characterize the growth of Ag islands on Ag(100), Cu/Co islands on Ru(0001), and pits on Si(001) etched with molecular oxygen. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：373 / 403

页数：31

共 105 条

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