A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam

被引：6

作者：

Yamanaka, Kimihiro ^{[1
]}

Uedono, Akira ^{[2
]}

机构：

[1] Kyocera SLC Technol Corp, Adv Packaging Lab, Shiga 5202362, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

SCRIPTA MATERIALIA | 2009年 / 61卷 / 01期

关键词：

Electroless Cu; Positron annihilation; Vacancy-type defect; LIFETIME SPECTROSCOPY; ELECTROPLATED CU; EQUILIBRIUM VACANCIES; ANNIHILATION; COPPER; METALS; FILMS; FE;

D O I：

10.1016/j.scriptamat.2009.02.006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vacancy-type defects in electroless Cu were investigated using both positron annihilation technologies and secondary ion mass spectroscopy. The density of vacancy-type defects in electroless Cu was greater than that in electrolytic Cu. The defects were vacancy-impurity complexes; the open volume of such defects was similar to that of superposition of small vacancy clusters and divacancy. No other major vacancy-type defect was observed at the interface between electroless Cu and the subsequent electrolytic Cu. (c) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：8 / 11

页数：4

共 50 条

[21] Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams
Uedono, Akira
Takahashi, Naomichi
Hasunuma, Ryu
Harashima, Yosuke
Shigeta, Yasuteru
Ni, Zeyuan
Matsui, Hidefumi
Notake, Akira
Kubo, Atsushi
Moriya, Tsuyoshi
Michishio, Koji
Oshima, Nagayasu
Ishibashi, Shoji
THIN SOLID FILMS, 2022, 762
[22] Vacancy-type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study
Stormer, J
Triftshauser, W
Hozhabri, N
Alavi, K
APPLIED PHYSICS LETTERS, 1996, 69 (13) : 1867 - 1869
[23] Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
Yang, X. L.
Zhu, W. X.
Wang, C. D.
Fang, H.
Yu, T. J.
Yang, Z. J.
Zhang, G. Y.
Qin, X. B.
Yu, R. S.
Wang, B. Y.
APPLIED PHYSICS LETTERS, 2009, 94 (15)
[24] Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams
Uedono, A.
Ito, K.
Nakamori, H.
Mori, K.
Nakano, Y.
Kachi, T.
Ishibashi, S.
Ohdaira, T.
Suzuki, R.
JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
[25] POSITRON-ANNIHILATION STUDIES OF VACANCY-TYPE DEFECTS
HAUTOJARVI, P
HYPERFINE INTERACTIONS, 1983, 15 (1-4): : 357 - 370
[26] Study of vacancy-type defects after Cu diffusion in GaAs
Bondarenko, V
Petters, K
Krause-Rehberg, R
Gebauer, J
Leipner, HS
PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) : 792 - 795
[27] Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam
Uedono, Akira
Malinverni, Marco
Martin, Denis
Okumura, Hironori
Ishibashi, Shoji
Grandjean, Nicolas
JOURNAL OF APPLIED PHYSICS, 2016, 119 (24)
[28] Positron annihilation study of vacancy-type defects in high-speed deformed Ni, Cu and Fe
Ohkubo, H
Tang, Z
Nagai, Y
Hasegawa, M
Tawara, T
Kiritani, M
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2003, 350 (1-2): : 95 - 101
[29] Investigation of vacancy-type defects in helium irradiated FeCrNi alloy by slow positron beam
Lu, Eryang
Cao, Xingzhong
Jin, Shuoxue
Zhang, Peng
Zhang, Chunxiong
Yang, Jing
Wu, Yaru
Guo, Liping
Wang, Baoyi
JOURNAL OF NUCLEAR MATERIALS, 2015, 458 : 240 - 244
[30] Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams
Uedono, Akira
Moriya, Tsuyoshi
Tsutsui, Takuro
Kimura, Shogo
Oshima, Nagayasu
Suzuki, Ryoichi
Ishibashi, Shoji
Matsui, Hidefumi
Narushima, Masaki
Ishikawa, Yoichi
Graf, Michael
Yamashita, Koji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)

← 1 2 3 4 5 →