3kV 600A 4H-SiC high temperature diode module

被引：0

作者：

Sugawara, Y ^{[1
]}

Takayama, D ^{[1
]}

Asano, K ^{[1
]}

Singh, R ^{[1
]}

Kodama, H ^{[1
]}

Ogata, S ^{[1
]}

Hayashi, T ^{[1
]}

机构：

[1] Kansai Elect Power Co, Tech Res Ctr, Amagasaki, Hyogo 6610974, Japan

来源：

PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3kV 600A 4H-SiC high temperature diode module has been developed for use in electricity supply, which utilizes a pressure contact flat package type module and includes five 6mm x 6mm SiC diode chips. The diode module does not get oxidized in the air even at 500degreesC and has excellent electrical performances at high temperature.

引用

页码：245 / 248

页数：4

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