3kV 600A 4H-SiC high temperature diode module

被引：0
|
作者：
Sugawara, Y [1 ]
Takayama, D [1 ]
Asano, K [1 ]
Singh, R [1 ]
Kodama, H [1 ]
Ogata, S [1 ]
Hayashi, T [1 ]
机构：
[1] Kansai Elect Power Co, Tech Res Ctr, Amagasaki, Hyogo 6610974, Japan
来源：
PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2002年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
3kV 600A 4H-SiC high temperature diode module has been developed for use in electricity supply, which utilizes a pressure contact flat package type module and includes five 6mm x 6mm SiC diode chips. The diode module does not get oxidized in the air even at 500degreesC and has excellent electrical performances at high temperature.
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页码：245 / 248
页数：4
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