Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN

被引：15
作者：
Jang, Ho Won [1 ]
Lee, Jong-Lam [1 ]
机构：
[1] Pohang Univ Sci & Technol, Grad Inst Adv Mat Sci, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 18期
关键词：
annealing; contact resistance; gallium compounds; III-V semiconductors; impurity states; laser beam effects; light emitting diodes; ohmic contacts; photoelectron spectra; semiconductor-metal boundaries; synchrotron radiation; vacancies (crystal); wide band gap semiconductors; LIGHT-EMITTING-DIODES; P-TYPE GAN; METAL CONTACTS; LIFT-OFF; FILMS;
D O I：
10.1063/1.3133873
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Abnormal behavior of contact resistance with annealing in Ohmic contacts to laser-irradiated n-GaN is investigated. Ti/Al contacts on as-grown n-GaN shows no change in contact resistivity with annealing at the temperature range of 100-400 degrees C. However, the annealing results in the significant increase in contact resistivity in the contacts on laser-irradiated n-GaN. Synchrotron radiation photoemission study reveals the reduction of the concentration of donor-like N vacancies near the surface by the annealing. These results suggest that preventing the annihilation of N vacancies in the laser-irradiated n-GaN is important in improving the performance of vertical-structure GaN-based light-emitting diodes fabricated by laser lift-off.
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页数：3
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