Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect

被引：11

作者：

Saitoh, M ^{[1
]}

Hiramoto, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 13期

关键词：

D O I：

10.1049/el:20040554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel highly-functional single-hole transistor (SHT) logic is proposed. An SHT is fabricated which shows Coulomb blockade and negative differential conductance (NDC) due to discrete quantum levels in the ultra-small dot at room temperature. By utilising gate-controllable NDC, exclusive-OR operation is successfully demonstrated in just one SHT at room temperature.

引用

页码：836 / 837

页数：2

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