V-band GaAs pHEMT cross-coupled sub-harmonic oscillator

被引：9
作者：
Huang, Fan-Hsiu [1 ]
Lin, Cheng-Kuo
Chan, Yi-Jen
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli, Taiwan
[2] Win Semicond, Taoyuan 320, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 08期
关键词：
cross-coupled oscillator; GaAs pseudomorphic high electron mobility transistor (pHEMT); sub-harmonic injection-locked oscillator;
D O I：
10.1109/LMWC.2006.879479
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mu m GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60 GHz with a tuning range of 2.5 GHz (from 57.8 GHz to 60.3 GHz). The maximum single-end output power is 3.8 d3m with a dc dissipation of 225 mW under a -3 V supply voltage. Within the input matching network for second (30 GHz) and fourth (15 GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120 MHz and 30 MHz, respectively.
引用
收藏
页码：473 / 475
页数：3
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