Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy

被引：8

作者：

Calandrini, Eugenio ^{[1
]}

Ortolani, Michele ^{[1
]}

Nucara, Alessandro ^{[1
]}

Scappucci, Giordano ^{[2
]}

Klesse, Wolfgang M. ^{[2
]}

Simmons, Michelle Y. ^{[2
]}

Di Gaspare, Luciana ^{[3
]}

de Seta, Monica ^{[3
]}

Sabbagh, Diego ^{[3
]}

Capellini, Giovanni ^{[3
,4
]}

Virgilio, Michele ^{[5
]}

Baldassarre, Leonetta ^{[6
]}

机构：

[1] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[2] Univ New S Wales, Australian Res Council Ctr Excellence Quantum Com, Sch Phys, Sydney, NSW 2052, Australia

[3] Univ Roma Tre, Dipartimento Sci, I-00146 Rome, Italy

[4] IHP, D-15236 Frankfurt, Oder, Germany

[5] Univ Pisa, Dipartimento Fis, Pisa, Italy

[6] Ist Italiano Tecnol, Ctr Life NanoSci Sapienza, I-00185 Rome, Italy

来源：

JOURNAL OF OPTICS | 2014年 / 16卷 / 09期

关键词：

infrared spectroscopy of semiconductors; drude model; germanium; N-TYPE; GE; ABSORPTION; SILICON; SI;

D O I：

10.1088/2040-8978/16/9/094010

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Novel silicon photonics applications requiring heavy n-type doping have recently driven a great deal of interest towards the phosphorous doping of germanium. In this work we report on infrared reflectance spectroscopy measurements of the electron density in heavily n-type doped germanium layers obtained by stacking multiple phosphorous delta-layers. Here, we demonstrate that the conventional Drude model of the electrodynamic response of free carriers in metals can be adapted to describe heavily doped semiconductor thin films. Consequently, the effect of the electron density on the plasma frequency, scattering rate and complex permittivity can be investigated.

引用

页数：7

共 26 条

[1]

BOUCAUD P, 2013, J APPL PHYS, V32, P1822

[2] High active carrier concentration in n-type, thin film Ge using delta-doping [J].

Camacho-Aguilera, Rodolfo E. ;

Cai, Yan ;

Bessette, Jonathan T. ;

Kimerling, Lionel C. ;

Michel, Jurgen .

OPTICAL MATERIALS EXPRESS, 2012, 2 (11) :1462-1469

[3] An electrically pumped germanium laser [J].

Camacho-Aguilera, Rodolfo E. ;

Cai, Yan ;

Patel, Neil ;

Bessette, Jonathan T. ;

Romagnoli, Marco ;

Kimerling, Lionel C. ;

Michel, Jurgen .

OPTICS EXPRESS, 2012, 20 (10) :11316-11320

[4] High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain [J].

Capellini, G. ;

De Seta, M. ;

Zaumseil, P. ;

Kozlowski, G. ;

Schroeder, T. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)

[5] Electronic structure of phosphorus and arsenic δ-doped germanium [J].

Carter, D. J. ;

Warschkow, O. ;

Gale, J. D. ;

Scappucci, G. ;

Klesse, W. M. ;

Capellini, G. ;

Rohl, A. L. ;

Simmons, M. Y. ;

McKenzie, D. R. ;

Marks, N. A. .

PHYSICAL REVIEW B, 2013, 88 (11)

[6] Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si [J].

Colace, L ;

Masini, G ;

Galluzzi, F ;

Assanto, G ;

Capellini, G ;

Di Gaspare, L ;

Palange, E ;

Evangelisti, F .

APPLIED PHYSICS LETTERS, 1998, 72 (24) :3175-3177

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[8] Hybrid III/V silicon photonic source with integrated 1D free-space beam steering [J].

Doylend, J. K. ;

Heck, M. J. R. ;

Bovington, J. T. ;

Peters, J. D. ;

Davenport, M. L. ;

Coldren, L. A. ;

Bowers, J. E. .

OPTICS LETTERS, 2012, 37 (20) :4257-4259

[9] INFRARED ABSORPTION IN N-TYPE GERMANIUM [J].

FAN, HY ;

SPITZER, W ;

COLLINS, RJ .

PHYSICAL REVIEW, 1956, 101 (02) :566-572

[10] All-Semiconductor Plasmonic Nanoantennas for Infrared Sensing [J].

Law, Stephanie ;

Yu, Lan ;

Rosenberg, Aaron ;

Wasserman, Daniel .

NANO LETTERS, 2013, 13 (09) :4569-4574

← 1 2 3 →