Boron penetration studies from p+ polycrystalline Si through HfSixOy

被引：41
作者：
Quevedo-Lopez, MA [1 ]
El-Bouanani, M
Kim, MJ
Gnade, BE
Wallace, RM
Visokay, MR
LiFatou, A
Bevan, MJ
Colombo, L
机构：
[1] Univ N Texas, Dept Mat Sci, Denton, TX 76203 USA
[2] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75265 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期
关键词：
D O I：
10.1063/1.1498872
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present detailed B penetration studies from B-doped polysilicon through alternate gate dielectric candidate HfSixOy films. No detectible B penetration is observed for annealing times as long as 20 s after 950 degreesC. Considerable B incorporation into the Si substrate is observed for annealing temperatures higher than 950 degreesC. By modeling the B depth profiles, we calculated the B diffusivities through HfSixOy to be higher than the corresponding diffusivities for SiO2. B diffusion through grain boundaries after HfSixOy crystallization is proposed to be responsible for the enhanced B diffusivity observed. (C) 2002 American Institute of Physics.
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页码：1074 / 1076
页数：3
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