Quantum dots and nanowires for optoelectronic device applications

被引：0
|
作者：
Gao, Q. [1 ]
Kim, Y. [1 ]
Joyce, H. J. [1 ]
Lever, P. [1 ]
Mokkapati, S. [1 ]
Buda, M. [1 ]
Tan, H. H. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, GPO Box 4, Canberra, ACT 0200, Australia
来源：
ICTON 2006: 8TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS: ESPC, NAON | 2006年
基金：
澳大利亚研究理事会;
关键词：
quantum dots; nanowire; lasers; selective area epitaxy; InGaAs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)13 substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper.
引用
收藏
页码：242 / +
页数：2
相关论文
共 50 条
  • [31] Engineering the optoelectronic properties of semiconductor quantum dots via quantum cutting and quantum entanglement for optoelectronic devices
    Nisar Ali
    Hanane At Lahoussine Ouali
    Otman Abida
    Mohamed Essalhi
    Bakhtiar Ul Haq
    Optical and Quantum Electronics, 57 (6)
  • [32] Synthesis and applications of quantum dots and magnetic quantum dots
    Ying, Jackie Y.
    Zheng, Yuangang
    Selvan, S. Tamil
    COLLOIDAL QUANTUM DOTS FOR BIOMEDICAL APPLICATIONS III, 2008, 6866
  • [33] Quantum Dots and Applications
    Han, Chang-Yeol
    Kim, Hyun-Sik
    Yang, Heesun
    MATERIALS, 2020, 13 (04)
  • [34] Template method for nano-order positioning and dense packing of quantum dots for optoelectronic device application
    Mukai, Kohki
    Hirota, Akinobu
    Shimizu, Yuta
    Nakashima, Seisuke
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (04)
  • [35] Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applications
    Wang, Qin
    Hoglund, Linda
    Almqvist, Susanne
    Noharet, Bertrand
    Asplund, Carl
    Malm, Hedda
    Petrini, Erik
    Andersson, Jan Y.
    Hammar, Mattias
    NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES III, 2006, 6327
  • [36] Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications
    P Bhattacharya
    K Kamath
    J Phillips
    D Klotzkin
    Bulletin of Materials Science, 1999, 22 : 519 - 529
  • [37] Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications
    Bhattacharya, P
    Kamath, K
    Phillips, J
    Klotzkin, D
    BULLETIN OF MATERIALS SCIENCE, 1999, 22 (03) : 519 - 529
  • [38] Tunable double quantum dots in InAs nanowires
    Scheffler, Marc
    Nadj-Perge, Stevan
    Kouwenhoven, Leo P.
    Borgstroem, Magnus T.
    Bakkers, Erik P. A. M.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05) : 1202 - 1204
  • [39] GaAsP Nanowires Containing Intentional and Self-Forming Quantum Dots
    Fonseka, H. Aruni
    Velichko, Anton V.
    Zhang, Yunyan
    Davis, George D.
    Gott, James A.
    Godde, Tillmann
    Sanchez, Ana M.
    Beanland, Richard
    Liu, Huiyun
    Mowbray, David J.
    QUANTUM DOTS, NANOSTRUCTURES, AND QUANTUM MATERIALS: GROWTH, CHARACTERIZATION, AND MODELING XVII, 2020, 11291
  • [40] 6-Mercaptohexanoic acid assisted synthesis of high quality InP quantum dots for optoelectronic applications
    Mahmoud, Waleed E.
    Chang, Y. C.
    Al-Ghamdi, A. A.
    Al-Marzouki, F.
    Bronstein, Lyudmila M.
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 56 : 86 - 91
12345