Optical properties of amorphous indium zinc oxide thin films synthesized by pulsed laser deposition

被引：18

作者：

Craciun, V. ^{[1
]}

Martin, C. ^{[2
]}

Socol, G. ^{[1
]}

Tanner, D. ^{[3
]}

Swart, H. C. ^{[4
]}

Becherescu, N. ^{[5
]}

Craciun, D. ^{[1
]}

机构：

[1] Natl Inst Lasers Plasma & Radiat Phys, Lasers Dept, Bucharest, Romania

[2] Ramapo Coll, Mahwah, NJ USA

[3] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[4] Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa

[5] Apel Laser, Bucharest 060512, Romania

来源：

APPLIED SURFACE SCIENCE | 2014年 / 306卷

关键词：

Pulsed laser deposition; Amorphous transparent and conductive; oxides; Infrared reflectance; Indium zinc oxide; PLASMONIC MATERIALS; TRANSISTORS; SILVER; LAYER; ITO;

D O I：

10.1016/j.apsusc.2014.03.189

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The optical properties of amorphous indium zinc oxide (a-IZO) films that were grown at room temperature by the pulsed laser deposition technique with the aid of a KrF excimer laser were investigated. Two values of 0.65 and 0.90 for the In/(In + Zn) films composition were chosen since they roughly define the area in the In-Zn-O phase diagram where good transmission in the visible range together with excellent electrical properties for a-IZO films were measured. The results of the investigations indicated that the IZO films containing 90 at.% In possessed excellent qualities: high transparency from 0.400 to 4 mu m, high reflectivity in the mid IR range together with a very low resistivity of 5 X 10(-4) Omega cm and a high mobility of 40 cm(2)/V s. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：52 / 55

页数：4

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