New screen methodology for ultra thin gate oxide technology

被引：0

作者：

Wang, A ^{[1
]}

Wu, CH ^{[1
]}

Shiue, RY ^{[1
]}

Huang, HM ^{[1
]}

Wu, K ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Hsinchu 30077, Taiwan

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

burn-in; noise margin; screen method; early failure rate; DVS;

D O I：

10.1109/RELPHY.2004.1315438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Result of this study shows that Less Noise Margin (LNM) dice have reliability weakness in ultra thin gate oxide technologies. High temperature chip probing (CP) test can narrow down noise margin and screen out the weak LNM dice effectively by functional test. Moreover, this paper also indicates that circuit propagation delay and VDDmin are effective indexes to assess reliability risk.

引用

页码：659 / 660

页数：2