High-yield fabrication of nm-size gaps in monolayer CVD graphene

被引：61

作者：

Nef, Cornelia ^{[1
]}

Posa, Laszlo ^{[2
,3
]}

Makk, Peter ^{[1
,2
,3
]}

Fu, Wangyang ^{[1
]}

Halbritter, Andras ^{[2
,3
]}

Schoenenberger, Christian ^{[1
]}

Calame, Michel ^{[1
]}

机构：

[1] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland

[2] Budapest Univ Technol & Econ, Dept Phys, H-1111 Budapest, Hungary

[3] MTA BME Condensed Matter Res Grp, H-1111 Budapest, Hungary

来源：

NANOSCALE | 2014年 / 6卷 / 13期

关键词：

SINGLE MOLECULES; CONDUCTANCE; TRANSISTORS; SCATTERING; PHONONS; DEVICES;

D O I：

10.1039/c4nr01838a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Herein we demonstrate the controlled and reproducible fabrication of sub-5 nm wide gaps in single-layer graphene electrodes. The process is implemented for graphene grown via chemical vapor deposition using an electroburning process at room temperature and in vacuum. A yield of over 95% for the gap formation is obtained. This approach allows producing single-layer graphene electrodes for molecular electronics at a large scale. Additionally, from Raman spectroscopy and electroburning carried out simultaneously, we can follow the heating process and infer the temperature at which the gap formation happens.

引用

页码：7249 / 7254

页数：6

共 60 条

[1] Patterning, Characterization, and Chemical Sensing Applications of Graphene Nanoribbon Arrays Down to 5 nm Using Helium Ion Beam Lithography [J].