Preparation of epitaxial Pb(Zr,Ti)O3 thin films using coating photolysis process

被引：11

作者：

Miyamoto, Y

Tsuchiya, T

Yamaguchi, I

Manabe, T

Niino, H

Yabe, A

Kumagai, T

Tsuchiya, T

Mizuta, S

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

[2] Sci Univ Tokyo, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan

来源：

APPLIED SURFACE SCIENCE | 2002年 / 197卷

关键词：

PZT; coating photolysis process; epitaxy; ArF;

D O I：

10.1016/S0169-4332(02)00348-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxially grown Pb(Zr,Ti)O-3 (PZT) thin films have been successfully prepared by the coating photolysis process using ArF. excimer laser at room temperature. Starting materials lead-2-ethylhexanoate, zirconium-2-ethylhexanoate oxide and titanium-2-ethyl-1-hexanolate were mixed and diluted with toluene, spin-coated on the single crystal SrTiO3 (STO)(0 0 1) substrate and dried at 150 C. When dried films were irradiated by ArF excimer laser at a fluence of 50-80 mJ/cm(2) at a repetition rate of 10 Hz for 1 min (600 shots), epitaxially PZT perovskite phase films were obtained. Single crystal LaAlO3 (LAO)(0 0 1) and quartz were also used as the substrate, PZT thin films which were grown on STO showed best crystallinity. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：398 / 401

页数：4

共 14 条

[1] Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films? [J].

Aggarwal, S ;

Madhukar, S ;

Nagaraj, B ;

Jenkins, IG ;

Ramesh, R ;

Boyer, L ;

Evans, JT .

APPLIED PHYSICS LETTERS, 1999, 75 (05) :716-718

[2] Size effects of epitaxial and polycrystalline Pb(Zr, Ti)O3 thin films grown by metalorganic chemical vapor deposition [J].

Fujisawa, H ;

Nakashima, S ;

Kaibara, K ;

Shimizu, M ;

Niu, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B) :5392-5396

[3] Low temperature crystallization of lead zirconate titanate thin films by a sol-gel method [J].

Huang, Z ;

Zhang, Q ;

Whatmore, RW .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7355-7361

[4] Effect of substrate material on the crystallinity and epitaxy of Pb(Zr,Ti)O3 thin films [J].

Hwang, KS ;

Manabe, T ;

Nagahama, T ;

Yamaguchi, I ;

Kumagai, T ;

Mizuta, S .

THIN SOLID FILMS, 1999, 347 (1-2) :106-111

[5] Preparation of epitaxial Pb(Zr,Ti)O-3 thin films on Nb-doped SrTiO3 (100) substrates by dipping-pyrolysis process [J].

Hwang, KS ;

Manabe, T ;

Yamaguchi, I ;

Kumagai, T ;

Mizuta, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08) :5221-5225

[6] PREPARATION AND CHARACTERIZATION OF SOL-GEL DERIVED EPITAXIAL AND ORIENTED PB(ZR0.52TI0.48)O-3 THIN-FILMS [J].

NASHIMOTO, K ;

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5147-5150

[7] Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories [J].

Ramesh, R ;

Aggarwal, S ;

Auciello, O .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2001, 32 (06) :191-236

[8]

RAMKUMAR K, MAT SOC SOC S P, V200, P121

[9] Microstructure and electrical properties of PbZr0.48Ti0.52O3 ferroelectric films on different Pt bottom electrodes [J].

Song, ZT ;

Lin, CL .

APPLIED SURFACE SCIENCE, 2000, 158 (1-2) :21-27

[10] A proposal of epitaxial oxide thin film structures for future oxide electronics [J].

Suzuki, M ;

Ami, T .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (01) :166-173

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