Influence of Device Parameter Variability on Current Sharing of Parallel-Connected SiC MOSFETs

In this paper, impact of device parameter variation on current sharing between silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) connected in parallel has been studied via Monte Carlo simulation. Paralleled MOSFETs driving an inductive load in a switching circuit, which are expressed by using a surface-potential-based SiC MOSFET model, have been analyzed. From the simulation results, dominant device parameters that affect the mismatch in the SiC MOSFET currents are identified. We also evaluate the effect of current mismatch on the energy loss imbalance. In our analysis, the model parameters related to flat-band voltage, channel length modulation, and current gain factor are found to be particularly important.