Ferroelectric properties of epitaxial Pb(Zr, Ti)O3 thin films on silicon by control of crystal orientation

被引：85

作者：

Dekkers, Matthijn ^{[1
]}

Nguyen, Minh D. ^{[1
]}

Steenwelle, Ruud ^{[1
]}

Riele, Paul M. te ^{[1
]}

Blank, Dave H. A. ^{[1
]}

Rijnders, Guus ^{[1
]}

机构：

[1] Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

POLARIZATION FATIGUE; ELECTRODES; GROWTH;

D O I：

10.1063/1.3163057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystalline Pb (Zr, Ti )O-3 (PZT) thin films between metallic-oxide SrRuO3 (SRO) electrodes were prepared using pulsed laser deposition on CeO2/yttria-stabilized zirconia buffered silicon (001) substrates. Different deposition conditions for the initial layers of the bottom SRO electrode result in an orientation switch. Either (110)-or (001)-oriented SRO thin films are obtained and the PZT films deposited on the bottom electrode continued both growth directions. The ferroelectric characteristics of the SRO/PZT/SRO capacitors are found to be strongly dependent on their crystalline orientation: PZT (001)-oriented thin films showed stable, high quality ferroelectric response, while the remnant polarization of the PZT (110)-oriented thin films only show high response after multiple switching cycles. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3163057]

引用

页数：3

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