Calculation on runaway process of high-energy fast electrons under nanosecond-pulse

被引:8
作者
Shao Tao [1 ]
Sun Guang-Sheng
Yan Ping
Gu Chen
Zhang Shi-Chang
机构
[1] Chinese Acad Sci, Inst Elect Engn, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
关键词
gas discharge; fast electron; runaway breakdown; nanosecond pulse;
D O I
10.7498/aps.55.5964
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The runaway breakdown model induced by fast electrons is promising in explaining the nanosecond-pulse breakdown. In this paper, runaway process and collision ionization of fast electrons are discussed. Based on the relations between the electron energy and effective retarding force, the evolution of injected electron energy as a function of distance away from the avalanche head was simulated. The higher applied electric filed strength is,. the lower the runaway energy threshold is and the more fast electrons can runaway, and gas pressures affect the runaway process of fast electrons greatly. Moreover, the runaway breakdown process under the high-voltage nanosecond pulse is described qualitatively.
引用
收藏
页码:5964 / 5968
页数:5
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