Dopant accumulation during substitutional-interstitial diffusion in semiconductors

被引：16

作者：

Lyubomirsky, I ^{[1
]}

Lyahovitskaya, V ^{[1
]}

Cahen, D ^{[1
]}

机构：

[1] WEIZMANN INST SCI,DEPT MAT & INTERFACES,IL-76100 REHOVOT,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.118290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When p-n junctions are formed by doping with a dopant that diffuses via a dissociative diffusion mechanism, dopant diffusion is suppressed and dopants can pile up near the junction, well above their original concentration. Calculations confirm this, if no local neutrality is assumed. The results agree well with published and our own experimental data for Zn diffusion in InP. The increased built-in electric field due to this pileup is expelled nearly completely to the side of the junction without the pileup. This effect has important consequences for devices containing thin and/or small regions doped with such dopants because such regions may be completely depleted. (C) 1997 American Institute of Physics.

引用

页码：613 / 615

页数：3

共 12 条

[1] SECONDARY ION MASS-SPECTROMETRY AND ELECTRICAL CHARACTERIZATION OF ZN DIFFUSION IN N-TYPE INP
BLAAUW, C
SHEPHERD, FR
EGER, D
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 605 - 610
[2] CONCENTRATION-DEPENDENT ZN DIFFUSION IN INP DURING METALORGANIC VAPOR-PHASE EPITAXY
CHU, SNG
LOGAN, RA
GEVA, M
HA, NT
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 3001 - 3007
[3] GOSELE UM, 1988, ANNU REV MATER SCI, V18, P257
[4] ANOMALOUS IMPURITY DIFFUSION IN III-V COMPOUNDS - THE CONSEQUENCE OF SELF-INDUCED FIELD EFFECTS
HILDEBRAND, O
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02): : 575 - 584
[5] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE
LONGINI, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130
[6] REISS I, 1994, SOLID STATE IONICS, V69, P43
[7] UNINTENTIONAL ZINC DIFFUSION IN INP PN-HOMOJUNCTIONS
REYNOLDS, CL
SWAMINATHAN, V
GEVA, M
SMITH, LE
LUTHER, LC
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (06) : 747 - 750
[8] ZN DIFFUSION IN INP - EFFECT OF SUBSTRATE DOPANT CONCENTRATION
SERREZE, HB
MAREK, HS
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 210 - 211
[9] SILICON-DOPING LEVEL DEPENDENT DIFFUSION OF BE IN ALGAAS/GAAS QUANTUM-WELL LASERS
SWAMINATHAN, V
CHAND, N
GEVA, M
ANTHONY, PJ
JORDAN, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) : 4648 - 4654
[10] DIFFUSION OF ZN ACROSS P-N-JUNCTIONS IN GA0.47IN0.53AS
TAYLOR, SJ
BEAUMONT, B
GUILLAUME, JC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (05) : 643 - 646

← 1 2 →