Effects of polarity on grain-boundary migration in ZnO

被引：20

作者：

Lee, JS ^{[1
]}

Wiederhorn, SM ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2004年 / 87卷 / 07期

关键词：

D O I：

10.1111/j.1151-2916.2004.tb07728.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The migration of boundaries between single crystal and polycrystalline ZnO was investigated using single crystals with well-defined crystallographic faces. The migration rate of the basal (0001) planes through polycrystalline ZnO depended on the crystallographic polarity of the basal plane. Grain boundary migration in the [0001] direction was much faster than in the [0001] direction. Migration rates of boundaries in nonpolar directions were somewhat slower than that in the [0001] direction. Slow growth in the [0001] direction and rapid growth in nonpolar directions found in the present study help to explain the anisotropic growth of the grains that contain head-to-head inversion boundaries in ZnO varistor ceramics.

引用

页码：1319 / 1323

页数：5

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