A wideband switchable absorber/reflector based on active frequency selective surface

被引：5

作者：

Chen, Hongwei ^{[1
]}

Cao, Qunsheng ^{[1
]}

Wang, Yi ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Elect & Informat Engn, Nanjing 211106, Peoples R China

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2021年 / 31卷 / 01期

关键词：

active frequency selective surface; reflector; wide‐ band absorber; DESIGN; THIN;

D O I：

10.1002/mmce.22474

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A wide-band absorber and reflector using PIN diodes based on active frequency selective surface (AFSS) is presented, which the AFSS is performed as a wide-band absorber and reflector with OFF and ON state diodes. By changing the states of the PIN diodes, the measured reflectivity of the structure can dynamically switch from reflection to less than -10 dB absorptivity ranging from 7.5 to 18 GHz under normal incidence. The unique characteristic of the proposed structure lies in its capability to switch between two working states. In addition, the bandwidth of the designed structure covers a wider band compared with earlier switchable absorber/reflector structures. The fabricated structure shows good agreement with the simulated results.

引用

页数：11

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