Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

被引：17
|
作者：
Xing Jun-Liang [1 ]
Zhang Yu [1 ]
Liao Yong-Ping [1 ]
Wang Juan [1 ]
Xiang Wei [1 ]
Xu Ying-Qiang [1 ]
Wang Guo-Wei [1 ]
Ren Zheng-Wei [1 ]
Niu Zhi-Chuan [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 05期
基金：
中国国家自然科学基金;
关键词：
CONTINUOUS-WAVE OPERATION; OUTPUT POWER;
D O I：
10.1088/0256-307X/31/5/054204
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
GaSb-based 2.4 mu m InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-mu m-wide 1-mm-long cavity is 28 mW, and the threshold current density is 400 A/cm(2) under continuous wave operation mode at room temperature.
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页数：3
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