Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

被引：17

作者：

Xing Jun-Liang ^{[1
]}

Zhang Yu ^{[1
]}

Liao Yong-Ping ^{[1
]}

Wang Juan ^{[1
]}

Xiang Wei ^{[1
]}

Xu Ying-Qiang ^{[1
]}

Wang Guo-Wei ^{[1
]}

Ren Zheng-Wei ^{[1
]}

Niu Zhi-Chuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 05期

基金：

中国国家自然科学基金;

关键词：

CONTINUOUS-WAVE OPERATION; OUTPUT POWER;

D O I：

10.1088/0256-307X/31/5/054204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaSb-based 2.4 mu m InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-mu m-wide 1-mm-long cavity is 28 mW, and the threshold current density is 400 A/cm(2) under continuous wave operation mode at room temperature.

引用

页数：3

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