19.3% Efficiency on P-Type Silicon Solar Cells by Pulsion® Plasma-Immersion Implantation

被引：9

作者：

Le Perchec, J. ^{[1
]}

Lanterne, A. ^{[1
]}

Michell, T.

Gall, S. ^{[1
]}

Monna, R. ^{[1
]}

Torregrosa, F.

Roux, L.

机构：

[1] CEA INES, Silicon Solar Cells Lab, F-73377 Le Bourget Du Lac, France

来源：

PV ASIA PACIFIC CONFERENCE 2012 | 2013年 / 33卷

关键词：

silicon cells; high efficiency; ion implantation; doping; experimental methods; THROUGHPUT ION-IMPLANTATION;

D O I：

10.1016/j.egypro.2013.05.035

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

IBS and INES have recently demonstrated the strong relevance of the plasma-immersion ion implantation (PIII) technique to realise high efficiency silicon solar cells. The fabrication process, developed on 239 cm(2) p-type Cz-Si wafers, gives performances similar to those of classical ion beam implantation, with an efficiency improvement of 0.7% absolute with respect to classical POCl3-based emitters. Repeatability and robustness of the developed process have been validated. We give some information describing the different steps to achieve the homogeneous n-emitters by pulsed-PIII and present characterisation results showing which cell parameters are better than that of standard cells. Both high throughput and low cost of the immersion-plasma equipment would seriously challenge technologies developed by other companies in the ion-implantation field devoted to the PV market. Investigations to realise BSF, advanced emitters or IBC cells by this technique are now included in the roadmap. (c) 2013 The Authors. Published by Elsevier Ltd.

引用

页码：18 / 23

页数：6

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