Thermal conductivity of silicene nanosheets and the effect of isotopic doping

被引:65
作者
Liu, Bo [1 ]
Reddy, C. D. [2 ]
Jiang, Jinwu [3 ]
Zhu, Hongwei [4 ]
Baimova, Julia A. [1 ]
Dmitriev, Sergey V. [5 ,6 ]
Zhou, Kun [1 ]
机构
[1] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[2] Inst High Performance Comp, Singapore 138632, Singapore
[3] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar, Germany
[4] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[5] Russian Acad Sci, Inst Met Superplast Problems, Ufa 450001, Russia
[6] Natl Res Tomsk State Univ, Tomsk 634050, Russia
基金
北京市自然科学基金; 俄罗斯科学基金会;
关键词
silicene; thermal conductivity; isotopic doping; superlattice; SIMULATION; SI;
D O I
10.1088/0022-3727/47/16/165301
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper investigates the thermal conductivity of silicene nanosheets (SiNSs) via molecular dynamic simulation. It shows that the thermal conductivity of pristine SiNSs is about 25-30 W mK(-1) and exhibits anisotropic behaviour. Moreover, it is found that isotopic doping is efficient in reducing the thermal conductivity of SiNSs. When SiNSs are randomly doped with Si-30 at the doping percentage of 50%, a maximum reduction of about 20% is obtained. This reduction can be increased when the dopants are arranged into a superlattice pattern. The thermal conductivity of these superlattice-structured SiNSs changes non-monotonically as the thickness of their lattice layers decreases. Detailed analysis of the phonon spectra demonstrates that the competing mechanism between the interface scattering and confinement effects of the phonon modes is responsible for this non-monotonical behaviour.
引用
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页数:8
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