Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

被引：36

作者：

Kageyama, T ^{[1
]}

Miyamoto, T ^{[1
]}

Ohta, M ^{[1
]}

Matsuura, T ^{[1
]}

Matsui, Y ^{[1
]}

Furuhata, T ^{[1
]}

Koyama, F ^{[1
]}

机构：

[1] Tokyo Inst Technol, P&I Lab, Midori Ku, Yokohama, Kanagawa, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 01期

关键词：

D O I：

10.1063/1.1760841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm(2) per well for an infinite cavity length. (C) 2004 American Institute of Physics.

引用

收藏

页码：44 / 48

页数：5

相关论文

共 25 条

[1] NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER [J].

BABA, T ;

YOGO, Y ;

SUZUKI, K ;

KOYAMA, F ;

IGA, K .

ELECTRONICS LETTERS, 1993, 29 (10) :913-914

[2] Optically pumped, monolithic, all-epitaxial 1.56μm vertical cavity surface emitting laser using Sb-based reflectors [J].

Blum, O ;

Klem, JF ;

Lear, KL ;

Vawter, GA ;

Kurtz, SR .

ELECTRONICS LETTERS, 1997, 33 (22) :1878-1880

[3] RT pulsed operation of metamorphic VCSEL at 1.55μm [J].

Boucart, J ;

Starck, C ;

Plais, A ;

Derouin, E ;

Fortin, C ;

Gaborit, F ;

Pinquier, A ;

Goldstein, L ;

Carpentier, D ;

Jacquet, J .

ELECTRONICS LETTERS, 1998, 34 (22) :2133-2135

[4] LOW-THRESHOLD, WAFER FUSED LONG-WAVELENGTH VERTICAL-CAVITY LASERS [J].

DUDLEY, JJ ;

BABIC, DI ;

MIRIN, R ;

YANG, L ;

MILLER, BI ;

RAM, RJ ;

REYNOLDS, T ;

HU, EL ;

BOWERS, JE .

APPLIED PHYSICS LETTERS, 1994, 64 (12) :1463-1465

[5] 144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES [J].

DUDLEY, JJ ;

ISHIKAWA, M ;

BABIC, DI ;

MILLER, BI ;

MIRIN, R ;

JIANG, WB ;

BOWERS, JE ;

HU, EL .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3095-3097

[6]

Iga K, 1996, 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P715, DOI 10.1109/ICIPRM.1996.492395

[7]

Kageyama T, 2002, IEICE T ELECTRON, VE85C, P71

[8] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[9] 1.2μm highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink [J].

Koyama, F ;

Schlenker, D ;

Miyamoto, T ;

Chen, Z ;

Matsutani, A ;

Sakaguchi, T ;

Iga, K .

ELECTRONICS LETTERS, 1999, 35 (13) :1079-1081

[10] Submilliamp long wavelength vertical cavity lasers [J].

Margalit, NM ;

Babic, DI ;

Streubel, K ;

Mirin, RP ;

Naone, RL ;

Bowers, JE ;

Hu, EL .

ELECTRONICS LETTERS, 1996, 32 (18) :1675-1677