p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

被引：5

作者：

Benyahia, Djalal ^{[1
]}

Kubiszyn, Lukasz ^{[2
]}

Michalczewski, Krystian ^{[1
]}

Keblowski, Artur ^{[2
]}

Martyniuk, Piotr ^{[1
]}

Piotrowski, Jozef ^{[2
]}

Rogalski, Antoni ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland

[2] Vigo Syst SA, PL-05850 Ozarow Mazowiecki, Poland

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2016年 / 16卷 / 05期

关键词：

Molecular beam epitaxy; GaSb; doping; high resolution Xray diffraction; semiconducting III-V materials;

D O I：

10.5573/JSTS.2016.16.5.695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2 degrees offcut towards < 110 > at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9x10(17) cm(-3). In addition, the reduction of GaSb lattice parameter with Be doping was studied.

引用

页码：695 / 701

页数：7

共 18 条

[1] W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency [J].

Aifer, E. H. ;

Tischler, J. G. ;

Warner, J. H. ;

Vurgaftman, I. ;

Bewley, W. W. ;

Meyer, J. R. ;

Kim, J. C. ;

Whitman, L. J. ;

Canedy, C. L. ;

Jackson, E. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (05)

[2]

ALCOCK CB, 1984, CAN METALL QUART, V23, P309

[3] HIGH-PURITY GASB EPITAXIAL LAYERS GROWN FROM SB-RICH SOLUTIONS [J].

ANAYAMA, C ;

TANAHASHI, T ;

KUWATSUKA, H ;

NISHIYAMA, S ;

ISOZUMI, S ;

NAKAJIMA, K .

APPLIED PHYSICS LETTERS, 1990, 56 (03) :239-240

[4]

Bak-Misiuk J., 1996, SOLID STATE PHENOM, V47-48, P437

[5] Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy [J].

Benyahia, D. ;

Kubiszyn, L. ;

Michalczewski, K. ;

Keblowski, A. ;

Martyniuk, P. ;

Piotrowski, J. ;

Rogalski, A. .

OPTO-ELECTRONICS REVIEW, 2016, 24 (01) :40-45

[6] Quantum cascade lasers emitting near 2.6 μm [J].

Cathabard, O. ;

Teissier, R. ;

Devenson, J. ;

Moreno, J. C. ;

Baranov, A. N. .

APPLIED PHYSICS LETTERS, 2010, 96 (14)

[7] MONOLITHIC OPTICALLY IMMERSED HGCDTE IR DETECTORS [J].

GRUDZIEN, M ;

PIOTROWSKI, J .

INFRARED PHYSICS, 1989, 29 (2-4) :251-253

[8] Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy [J].

Hogg, RA ;

Suzuki, K ;

Tachibana, K ;

Finger, L ;

Hirakawa, K ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (22) :2856-2858

[9] CRYSTAL DEFECTS IN VERTICAL-CAVITY EPITAXIAL STRUCTURES ON GAAS INVESTIGATED BY X-RAY-METHODS [J].

JENICHEN, B ;

HEY, R ;

WESTPHAL, S ;

KAGANER, V ;

KOHLER, R .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3) :520-522

[10]

Kittel C., 1960, INTRO SOLID STATE PH, P348

← 1 2 →