Radial restricted solid-on-solid and etching interface-growth models

被引:4
作者
Alves, Sidiney G. [1 ]
机构
[1] Univ Fed Sao Joao Del Rei, Dept Fisi & Matemat, BR-36420000 Ouro Branco, MG, Brazil
关键词
FLUCTUATIONS;
D O I
10.1103/PhysRevE.97.032801
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
An approach to generate radial interfaces is presented. A radial network recursively obtained is used to implement discrete model rules designed originally for the investigation in flat substrates. I used the restricted solid-on-solid and etching models as to test the proposed scheme. The results indicate the Kardar, Parisi, and Zhang conjecture is completely verified leading to a good agreement between the interface radius fluctuation distribution and the Gaussian unitary ensemble. The evolution of the radius agrees well with the generalized conjecture, and the two-point correlation function exhibits also a good agreement with the covariance of the Airy(2) process. The approach can be used to investigate radial interfaces evolution for many other classes of universality.
引用
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页数:5
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