Temperature Dependence of the Electrical Resistivity and Hall Effect of Disordered AuxPd1-x Alloys

被引：0

作者：

Imamnazarov, D. H. ^{[1
]}

Granovsky, A. B. ^{[2
]}

机构：

[1] Samarkand State Univ, Dept Phys, Samarkand 140104, Uzbekistan

[2] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia

来源：

MOSCOW UNIVERSITY PHYSICS BULLETIN | 2020年 / 75卷 / 03期

关键词：

electronic structure; electron density of states; electrical resistivity; Hall coefficient; coherent potential method;

D O I：

10.3103/S0027134920030108

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Within the framework of the coherent potential approximation for the s-d model, we compute the electrical resistivity rho and Hall coefficient R-o of disordered paramagnetic AuxPd1-x alloys, taking the electron-phonon interaction into account. Based on the example of these alloys, the mechanisms responsible for the correlation between the resistivity and its temperature coefficient (Mooij rule) and the correlation between temperature dependencies of rho and R-o are discussed. The results are in good agreement with the experimental data.

引用

页码：230 / 236

页数：7

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