High-Electron- Mobility and Air-Stable 2D Layered PtSe2 FETs

被引:600
作者
Zhao, Yuda [1 ,2 ]
Qiao, Jingsi [1 ,3 ,4 ]
Yu, Zhihao [5 ,6 ]
Yu, Peng [7 ]
Xu, Kang [1 ]
Lau, Shu Ping [1 ,2 ]
Zhou, Wu [8 ]
Liu, Zheng [7 ]
Wang, Xinran [5 ,6 ]
Ji, Wei [3 ,4 ]
Chai, Yang [1 ,2 ]
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ Shenzhen, Res Inst, Shenzhen 518057, Peoples R China
[3] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China
[4] Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China
[5] Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[6] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[7] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[8] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
基金
中国国家自然科学基金; 新加坡国家研究基金会;
关键词
METAL-INSULATOR-TRANSITION; FIELD-EFFECT TRANSISTORS; BLACK PHOSPHORUS; MOLYBDENUM-DISULFIDE; MONOLAYER; TRANSPORT; MOS2; CONTACTS; GROWTH; MODULATION;
D O I
10.1002/adma.201604230
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2. The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material.
引用
收藏
页数:10
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