Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

被引：16

作者：

Baker, Troy ^{[1
]}

Mayo, Ashley ^{[1
]}

Veisi, Zeinab ^{[1
]}

Lu, Peng ^{[1
]}

Schmitt, Jason ^{[1
]}

机构：

[1] Nitride Solut Inc, Wichita, KS 67213 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 403卷

关键词：

High resolution X-ray diffraction; Substrates; Hydride vapor phase epitaxy; Nitrides; Semiconducting aluminum compounds; SAPPHIRE; LAYERS;

D O I：

10.1016/j.jcrysgro.2014.06.018

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Aluminum nitride (AIN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 degrees C. AIN templates grown to a thickness of 1 mu m were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135" for the (002) and 513" for the (102). (C) 2014 Published by Elsevier B.V.

引用

页码：29 / 31

页数：3

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