Improved crosstalk noise modeling of MWCNT interconnects using FDTD technique

被引：22

作者：

Kumar, Vobulapuram Ramesh ^{[1
]}

Kaushik, Brajesh Kumar ^{[1
]}

Patnaik, Amalendu ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & Commun Engn, Roorkee 247667, Uttar Pradesh, India

来源：

MICROELECTRONICS JOURNAL | 2015年 / 46卷 / 12期

关键词：

FDTD; CMOS; Multiwall CNT; Crosstalk;

D O I：

10.1016/j.mejo.2015.10.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a crosstalk noise model of CMOS gate-driven coupled multi-walled carbon nanotube (MWCNT) interconnects based on finite-difference time-domain (FDTD) technique. The analysis is based on the transmission line model of MWCNT interconnect and modified alpha power law model of CMOS driver. It is observed that the results of proposed model closely match with that of HSPICE simulations and at the same time the model is more time efficient than the HSPICE. Moreover, it is observed that the conventional models are not useful for accurate estimation of crosstalk induced performance parameters. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：1263 / 1268

页数：6

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