Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

被引：5

作者：

Yilmaz, M. ^{[2
]}

Sun, Y. ^{[1
]}

Balkan, N. ^{[1
]}

Ulug, B. ^{[2
]}

Ulug, A. ^{[2
]}

Sopanen, M. ^{[3
]}

Reentila, O. ^{[3
]}

Mattila, M. ^{[3
]}

Fontaine, C. ^{[4
]}

Arnoult, A. ^{[4
]}

机构：

[1] Univ Essex, Dept Comp & Elect Syst, Colchester CO4 3SQ, Essex, England

[2] Akdeniz Univ, Dept Phys, Fac Arts & Sci, TR-07058 Antalya, Turkey

[3] Aalto Univ, Optoelect Lab, Helsinki 02015, Finland

[4] LAAS, F-31077 Toulouse 4, France

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期

关键词：

Photoluminescence; GaInNAs/GaAs QWs; Modulation doping; MOLECULAR-BEAM EPITAXY;

D O I：

10.1016/j.mejo.2008.06.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：406 / 409

页数：4

共 8 条

[1] Annealing in GaInNAs system [J].

Kondow, M ;

Kitatani, T ;

Shirakata, S .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (31) :S3229-S3244

[2] In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells [J].

Liu, HF ;

Karrinne, S ;

Peng, CS ;

Jouhti, T ;

Konttinen, J ;

Pessa, M .

JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) :171-175

[3] Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity [J].

Merrick, M. ;

Cripps, S. A. ;

Murdin, B. N. ;

Hosea, T. J. C. ;

Veal, T. D. ;

McConville, C. F. ;

Hopkinson, M. .

PHYSICAL REVIEW B, 2007, 76 (07)

[4] Optical properties of GaNAs and GaInAsN quantum wells [J].

Potter, RJ ;

Balkan, N .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (31) :S3387-S3412

[5]

SUN Y, OPT QUANTUM ELECT

[6] Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells [J].

Sun Zheng ;

Wang Bao-Rui ;

Xu Zhong-Ying ;

Sun Bao-Quan ;

Ji Yang ;

Ni Hai-Qiao ;

Niu Zhi-Chuan .

CHINESE PHYSICS LETTERS, 2006, 23 (09) :2566-2569

[7] The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content [J].

Wu, DH ;

Niu, ZC ;

Zhang, SY ;

Ni, HQ ;

He, ZH ;

Sun, Z ;

Han, Q ;

Wu, RH .

JOURNAL OF CRYSTAL GROWTH, 2006, 290 (02) :494-497

[8] 0.8EV PHOTOLUMINESCENCE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

YU, PW ;

ROBINSON, GD ;

SIZELOVE, JR ;

STUTZ, CE .

PHYSICAL REVIEW B, 1994, 49 (07) :4689-4694

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