Proton irradiation-induced intermixing in InxGa1-xAs/InP quantum wells -: the effect of In composition

被引：7

作者：

Gareso, P. L. ^{[1
]}

Buda, M.

Fu, L.

Tan, H. H.

Jagadish, C.

Dao, L. V.

Wen, X.

Hannaford, P.

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[2] Swinburne Univ Technol, Fac Engn & Ind Sci, Ctr Atoms Opt & Ultrafast Spect, Melbourne, Vic 2033, Australia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 10期

关键词：

D O I：

10.1088/0268-1242/21/10/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated atomic intermixing in InxGa1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.

引用

页码：1441 / 1446

页数：6

共 22 条

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