Thin-Film Transistors With Amorphous Indium-Gallium-Oxide Bilayer Channel

被引：18
作者：
Yang, C. P. [1 ,2 ]
Chang, S. J. [1 ,2 ]
Chang, T. H. [1 ,2 ]
Wei, C. Y. [1 ,2 ]
Juan, Y. M. [1 ,2 ]
Chiu, C. J. [1 ,2 ]
Weng, W. Y. [1 ,2 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 05期
关键词：
IGO; bilayer; TFTs; amorphous; ELECTRICAL PERFORMANCE; STABILITY;
D O I：
10.1109/LED.2017.2685619
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the deposition of amorphous indium-gallium-oxide (a-IGO) films on glass substrate by co-sputtering and the fabrication of thin film transistors (TFTs) with a-IGO bilayer channel. It was found that the electron mobility, mu(FE), sub-threshold swing, SS, and Ion/Ioff ratio of the fabricated TFTs were all better than those reported previously from the TFTs with single a-IGO channel. By properly controlling the sputtering powers, we achieved TFTs with mu(FE) of 53.2 cm(2)/Vs, SS of 0.19 V/decade and I-on/I-off ratio of similar to 10(7).
引用
收藏
页码：572 / 575
页数：4
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