Thin-Film Transistors With Amorphous Indium-Gallium-Oxide Bilayer Channel

被引：18

作者：

Yang, C. P. ^{[1
,2
]}

Chang, S. J. ^{[1
,2
]}

Chang, T. H. ^{[1
,2
]}

Wei, C. Y. ^{[1
,2
]}

Juan, Y. M. ^{[1
,2
]}

Chiu, C. J. ^{[1
,2
]}

Weng, W. Y. ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 05期

关键词：

IGO; bilayer; TFTs; amorphous; ELECTRICAL PERFORMANCE; STABILITY;

D O I：

10.1109/LED.2017.2685619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the deposition of amorphous indium-gallium-oxide (a-IGO) films on glass substrate by co-sputtering and the fabrication of thin film transistors (TFTs) with a-IGO bilayer channel. It was found that the electron mobility, mu(FE), sub-threshold swing, SS, and Ion/Ioff ratio of the fabricated TFTs were all better than those reported previously from the TFTs with single a-IGO channel. By properly controlling the sputtering powers, we achieved TFTs with mu(FE) of 53.2 cm(2)/Vs, SS of 0.19 V/decade and I-on/I-off ratio of similar to 10(7).

引用

页码：572 / 575

页数：4

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