An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

被引：15
作者：
Hsu, Hsiao-Hsuan [1 ]
Chang, Chun-Yen [1 ]
Cheng, Chun-Hu [2 ]
Chiou, Shan-Haw [3 ]
Huang, Chiung-Hui [3 ]
Chiu, Yu-Chien [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 10610, Taiwan
[3] Ind Technol Res Inst, Mat & Chem Res Lab, Hsinchu 31040, Taiwan
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 05期
关键词：
Gettering; InGaZnO (IGZO); thin-film transistor (TFT); titanium oxide (TiOx); GATE DIELECTRICS; ZINC-OXIDE;
D O I：
10.1109/TNANO.2014.2332395
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.
引用
收藏
页码：933 / 938
页数：6
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