Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

被引：21

作者：

Liu, Jie ^{[1
]}

Liu, Chang-Hai ^{[1
]}

She, Xiao-Jian ^{[1
]}

Sun, Qi-Jun ^{[1
]}

Gao, Xu ^{[1
]}

Wang, Sui-Dong ^{[1
]}

机构：

[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 16期

基金：

中国国家自然科学基金;

关键词：

RAMAN-SPECTROSCOPY; GRAPHENE; VOLTAGE; FILMS;

D O I：

10.1063/1.4898811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 27 条

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